1. product profile 1.1 general description a 200 w ldmos rf power transistor for broadcast transmitter and industrial applications. the transistor is suitable for the frequency range hf to 1500 mhz. the excellent ruggedness and broadband performance of this device makes it ideal for digital applications. 1.2 features and benefits ? integrated esd protection ? excellent ruggedness ? high power gain ? high efficiency ? excellent reliability ? easy power control ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? communication transmitter applications in the hf to 1500 mhz frequency range ? industrial applications in the hf to 1500 mhz frequency range blf647ps broadband power ldmos transistor rev. 2 ? 18 november 2013 product data sheet table 1. application information rf performance at t h = 25 ? c in a common source test circuit. test signal f v ds i dq p l(av) p l(m) g p ? d imd3 (mhz) (v) (a) (w) (w) (db) (%) (dbc) pulsed, class-b 1300 32 0.1 - 200 17.5 70 - cw, class-b 1300 32 0.1 200 - 17.5 70 - 2-tone, class-ab f 1 = 1299.95; f 2 = 1300.05 32 0.7 75 - 19 48 ? 33
blf647ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 18 november 2013 2 of 14 nxp semiconductors blf647ps broadband power ldmos transistor 2. pinning information [1] connected to flange 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. for details refer to the on-line mtf calculator. 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. table 2. pinning pin description simplified outline graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] v \ p table 3. ordering information type number package name description version blf647ps - earless flanged ceramic package; 4 leads sot1121b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] -225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case = 80 ?c; p l = 200 w [1] 0.34 k/w
blf647ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 18 november 2013 3 of 14 nxp semiconductors blf647ps broadband power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf647ps is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; f = 1300 mhz at rated load power. table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.1ma 65 - - v v gs(th) gate-source threshold voltage v ds =28 v; i d = 110 ma 1.55 1.8 2.25 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75v; v ds =20v 18.1 20 - a i gss gate leakage current v gs =11v; v ds =0v - - 140 na g fs forward transconductance v ds =20v; i d = 5500 ma - 7.6 - s r ds(on) drain-source on-state resistance v gs =v gs(th) +3.75v; i d =3.85a -140-m ? table 7. ac characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c iss input capacitance v gs = 0 v; v ds =32v; f=1mhz - 78 - pf c oss output capacitance v gs = 0 v; v ds =32v; f=1mhz - 30 - pf c rs feedback capacitance v gs = 0 v; v ds =32v; f=1mhz - 1.3 - pf table 8. rf characteristics test signal: cw; f = 1300 mhz; rf performance at v ds =32v; i dq = 100 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 200 w 16.5 17.5 - db ? d drain efficiency p l = 200 w 66 70 - %
blf647ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 18 november 2013 4 of 14 nxp semiconductors blf647ps broadband power ldmos transistor 7.2 test circuit information see table 9 for a list of components. fig 1. schematic for class-ab production test circuit d d d / / / & |